Products

«Kazakhstan Solar Solutions» LLP produces photovoltaic cells manufactured from multicrystalline silicon for the purpose of their subsequent mounting in solar modules (which are also known as «solar batteries»). Use of multicrystalline silicon as the raw material allows us to keep optimum balance between price and product efficiency without reduction of final product life. Today the technologies used by us are the most reputable and most common in a global photovoltaic industry.

Further, the multicrystalline silicon wafers with dimensions of 156 х 156 mm are manufactured from solar grade silicon. The silicon wafers are the basis for subsequent production of photovoltaic cells and have potential for performance of subsequent products with high efficiency. Wafer production process involves multicrystalline ingot growing and its further cutting into wafers as well as wafers cleaning and classification.

Multicrystalline silicon wafer

  • Size 156 mm x ± 0,5 mm x 156 ± 0,5 mm
  • Thickness 200 ± 20 µm
  • TTV <40 µm
  • Traces of cut ≤ 25 µm
  • Bending ≤ 75 µm
  • Material - silicon of solar grade (SOG)
  • Conductivity type - p
  • Resistivity 1-2.5 Ohm.cm.
  • Life time > 3.5 µm (measured on the block)

The final product, produced by LLP «Kazakhstan Solar Solutions», is a photovoltaic cell - a special kind of a semiconductor diode, which is capable to convert visible light, infrared and ultraviolet radiation into electrical energy.  Energy conversion is based on the photoelectric effect, which occurs in inhomogeneous semiconductor structures when exposed to sunlight.  In the manufacturing process using as a basis (substrate) multicrystalline silicon wafers are subjected to various kinds of physical and chemical treatment to achieve the stated performance and reduce losses.

Photoelectric cell

  • Size 156 mm x ± 0,5 156 ± 0,5 mm
  • The thickness of 200 ± 20 mm
  • Front surface:

-  deep blue silicon nitride antireflection coating

-  3 silver contact bars, 1.5 mm width (distance between bars 52 mm)

-  85 silver current collecting contacts

  • Rear surface:

-  Continuous coating with a thin aluminum layer

- 3 intermittent contact bars, 2.8 mm width

Electrical Characteristics

Max. power 
(Vtu.m. *)

Efficiency 
(%)

Open-circuit voltage (V)

Short circuit current, (A)

Parallel resistance (ohms)

Consistent resistance, (IOM)

Fill factor (%)

4.23

17.4

0.621

8.66

> 10

< 15

> 72

4.19

17.2

0.620

8.63

> 10

< 15

> 72

4.14

17

0.619

8.57

> 10

< 15

> 72

4.09

16.8

0.617

8.51

> 10

< 15

> 72

4.04

16.6

0.614

8.45

> 10

< 15

> 72

3.99

16.4

0.611

8.41

> 10

< 15

> 72

3.94

16.2

0.610

8.37

> 10

< 15

> 72

3.89

16

0.608

8.32

> 10

< 15

> 72

3.85

15.8

0.607

8.28

> 10

< 15

> 72

* Data at standard test conditions STC: 1000Vt/m2, 25 ° C, AM1.5G (IEC 60904-3 Ed. 1), max. power ± 1,5% RH., Efficiency: ± 0,2% abs.


 

 

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